IRF640B Mos FET 18A 200V N-channel TO-220 DIP

The IRF640B is an amplified N-channel FET. IRF640B has low resistance and good anti-avalanche capability. Suitable for high efficiency switching DC/DC converters, switching power supply, DC/AC converters. Intermittent power and motor control.

Features:-

1. 18A, 200V, RDS(on)=0.18 @VGS= 10 V.

2. low gate storage charge  typical value 45nC.

3. low transmission capacitance  typical value 45pF.

4. fast conversion.

5. 100% avalanche test.

6. improved voltage rise rate capability.