IRF530N MOSFET – 100V 17A N-Channel Power MOSFET

IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Compliant to RoHS directive 2002/95/EC

Detailed Specifications:-

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Drain-Source Breakdown Voltage (Vds)	100V
Continuous Drain Current (Id)	17A
Drain-Source Resistance (Rds On)	90mOhms
Gate-Source Voltage (Vgs)	20V
Gate Charge (Qg)	37 nC
Operating Temperature Range	-55 – 175°C
Power Dissipation (Pd)	70W