IRFBG30 MOSFET N-CHANNEL POWER MOSFET

IRFBG30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

•  Dynamic dV/dt rating
•  Repetitive avalanche rated
•  Fast switching
• Ease of paralleling
• Simple drive requirements
• Number of Channels: 1
• Transistor Polarity: N -Channel
• Drain-Source Breakdown Voltage (Vds): 1000V
• Continuous Drain Current (Id):3.1A
• Operating Temperature Range: -55 – 150°C

Package Includes:

1 x IRFBG30 MOSFET N-Channel Power MOSFET TO-220 Package – 1000V 3.1A