IRF730 MOSFET – 400V 5.5A N-Channel Power MOSFET TO-220 Package

IRF730 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 74 W.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Compliant to RoHS directive 2002/95/EC

Detailed Specifications:-

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Drain-Source Breakdown Voltage (Vds)	400V
Continuous Drain Current (Id)	5.5A
Drain-Source Resistance (Rds On)	1Ohms
Gate-Source Voltage (Vgs)	20V
Gate Charge (Qg)	38 nC
Operating Temperature Range	-55 – 150°C
Power Dissipation (Pd)	74W