The MBR20100CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:-
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Specification:-
Symbol | Parameter | Value | Units |
VRRM | Peak Repetitive Reverse Voltage | 100 | V |
VR | Maximum DC Reverse Voltage | 100 | V |
IF(AV) | Maximum Average Forward Rectified Current | 10 (Per Leg), 20 (Per Device) | A |
IFSM | Non-Repetitive Peak Forward Surge Current | 150 | A |
TJ | Operating Junction Temperature Range | -55 to 150 | °C |
Tstg | Storage Temperature Range | -55 to 150 | °C |
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