Features:-
• Low VCE (ON) Trench IGBT Technology.
• Low switching losses.
• Maximum Junction temperature 175 °C.
• 5 μS short circuit SOA.
• Square RBSOA.
• 100% of the parts tested for 4X rated current (ILM).
• Positive VCE (ON) Temperature co-efficient.
• Ultra fast soft Recovery Co-Pak Diode.
• Tight parameter distribution.
• Lead Free Package.
Benefits:-
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
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