This Power MOSFET is the latest development of STMicroelectronics’s unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Specification:-
| FET Type | MOSFET N-Channel Metal Oxide |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current – Continuous Drain (Id) @ 25 C | 50A |
| Rds On (Max) @ Id Vgs | 28 mOhm @ 25A 10V |
| Vgs(th) (Max) @ Id | 4V @ 250?A |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1780pF @ 25V |
| Power – Max | 150W |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
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