The SFH6916 has a GaAs infrared emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 16 pin 50 mil lead pitch mini flat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits.
FEATURES:-
• SOP (small outline package)
• Isolation test voltage, 3750 V RMS (1.0 s)
• High collector-emitter voltage, VCEO= 70 V
• Low saturation voltage
• Fast switching times
• Temperature stable
• Low coupling capacitance
• End stackable, 0.050″ (1.27 mm) spacing
• Lead (Pb)-free component
• Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY
SFH6916 technical specifications, attributes, and parameters.
Attributes
|
Value
|
---|
Fall time
|
3us@2mA,100Ω
|
Input voltage type
|
DC
|
Output Type
|
Phototransistor
|
Output Current
|
50mA
|
Operating Temperature
|
-55℃~+100℃
|
Number of Outputs
|
4
|
Collector-Emitter Saturation Voltage (Vce(sat)@Ic,IF)
|
0.1V@1mA,20mA
|
Reverse Voltage
|
6V
|
Forward Voltage
|
1.15V
|
Rise time
|
4us@2mA,100Ω
|
Receiving End Voltage
|
70V
|
Isolation Voltage(rms)
|
3750V
|
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